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Updated: Jan 14, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
Iodization engineering at vacancy defects re-balances charge distribution of FeN4 active sites
Xuebi Rao1, Jialin Sun1, Liqun Liu1
1Institute for Sustainable Energy/College of Sciences, Shanghai University, Shanghai 200444, China.
Abstract:
Regulating the electronic structure of FeN4 active sites in iron‑nitrogen‑carbon (Fe-N-C) catalysts represents a promising approach to enhance their intrinsic activity for the oxygen reduction reaction (ORR). However, developing effective strategies to achieve heteroatom-doping near FeN4 sites and gaining mechanistic insights into their ORR electrocatalytic behavior remain significant challenges. In this work, we propose an iodization engineering approach to modulate the charge distribution of FeN4 centers in a Fe and iodine (I) co-doped N-containing carbon framework (Fe-N-I/CF) catalyst, and investigate the regulatory mechanism of I-doping on the electronic structure of the Fe active sites through spectroscopic characterizations and theoretical calculations. Strategic I-doping at N-rich vacancy defects adjacent to atomic FeN4 sites with an average FeI distance of ∼4.2 Å can effectively rebalance the local charge distribution of the Fe center. This rebalancing lowers the free energy barrier of the rate-determining step and induces a continuous downshift of the d-band center, thereby enhancing ORR electrocatalytic performance. The optimized Fe-N-I/CF catalyst exhibits a high half-wave potential of 0.937 V (vs. RHE) and enables zinc-air batteries to achieve a peak power density of 268.8 mW cm-2 with excellent stability over 720 h.
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