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Published on: February 8, 2018
Weak temperature dependence of orbital Hall angle in Ta/Ni bilayers
Tianren Luo1,2,3, Qingtao Xia1,2, Junda Qu1,2
1Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, People's Republic of China.
Orbital Hall effect (OHE) in Ta/Ni bilayers was investigated across temperatures. OHE dominates over spin Hall effect (SHE), showing weak temperature dependence, advancing orbitronics applications.
Area of Science:
- Spintronics
- Condensed Matter Physics
- Materials Science
Background:
- Characterizing temperature dependence of spin Hall angle (SHA) is key to understanding spin Hall effect (SHE).
- Experimental data on orbital Hall effect (OHE) under varying temperatures are limited.
- The effective charge-to-spin conversion efficiency (θH) combines SHA and orbital Hall angle (OHA).
Purpose of the Study:
- To systematically investigate the temperature dependence of effective charge-to-spin conversion efficiency (θH) in Ta/Ni and Ta/CoFeB bilayers.
- To determine the dominant contribution of OHE versus SHE in Ta/Ni.
- To understand the temperature dependence of OHA in Ta/Ni.
Main Methods:
- Fabrication of Ta/Ni and Ta/CoFeB bilayers.
- Systematic measurement of effective charge-to-spin conversion efficiency (θH) from 10 K to 300 K.
- Comparative analysis of Ta/Ni and Ta/CoFeB samples to isolate OHE contributions.
Main Results:
- The θH in Ta/Ni remained positive across the temperature range, indicating OHE dominance over SHE.
- Ta/CoFeB samples showed negative θH, consistent with SHA of Ta and negligible OHE.
- Both Ta/Ni and Ta/CoFeB exhibited similar increasing trends in θH as temperature decreased.
- The similar trends suggest a weak temperature dependence of OHA in Ta/Ni.
Conclusions:
- Orbital Hall effect plays a dominant role in Ta/Ni bilayers.
- The orbital Hall angle in Ta/Ni demonstrates weak temperature dependence.
- These findings enhance the understanding of OHE and support potential applications in orbitronics.
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