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Updated: Jan 14, 2026

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Field driven evolution of periodic antiferromagnetic skyrmion in non-centrosymmetric semiconducting monolayer
1Advanced Functional Materials Laboratory, Department of Physics, Tezpur University (Central University), Tezpur-784028, India. pdeb@tezu.ernet.in.
Abstract:
Antiferromagnetic skyrmion is a topologically protected texture with stable nanoscale spin textures with countable particle-like properties, which are resistant to the skyrmion Hall effect, and suitable for high-density data storage spintronic applications. However, the absence of long-range periodic antiferromagnetic skyrmion order in dynamically stable single-layer semiconducting materials hinders the compatibility and integrability of skyrmion-based devices with existing semiconductor-based technologies. Here, in this work, we demonstrate the nucleation of periodic antiferromagnetic skyrmion in a Janus non-centrosymmetric semiconducting monolayer, MnBrCl. In the Janus monolayer with a unique antiferromagnetic double-stranded helical ground state configuration of magnetic moments, a periodic antiferromagnetic skyrmion is nucleated under a magnetic field, which has not been reported previously. We have thoroughly investigated the microscopic origin of this periodic, topologically protected structure and propose a four-sublattice framework that explains the field-driven nucleation of the antiferromagnetic skyrmion. This mechanism of antiferromagnetic skyrmion evolution, based on the four-sublattice framework, offers a new perspective on the formation of periodic antiferromagnetic skyrmions. Our analysis also provides deeper insight into the controllability of magnetic topology in Janus non-centrosymmetric materials. Further, the magnetic tunability of the nucleated periodic AFM skyrmions suggests the suitability of the materials for parallel processing applications in multi-state memory devices and neuromorphic computing, thereby enriching the domain of AFM skyrmion based spintronics.
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