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Flexible InGaAs/InAlAs avalanche photodiodes for short-wave infrared detection.
Jishen Zhang1, Rui Shao1, Haiwen Xu1
1Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
Nature Communications
|October 23, 2025
Summary
Researchers developed flexible InGaAs/InAlAlas avalanche photodiodes for short-wave infrared detection. These novel flexible detectors maintain performance under bending, opening new possibilities for optical sensing applications.
Area of Science:
- Materials Science
- Optoelectronics
- Semiconductor Physics
Background:
- Flexible detectors are crucial for advanced optical sensing and imaging.
- Conventional photodiodes lack sufficient responsivity in the short-wave infrared spectrum.
- Internal multiplication gain is essential for enhanced responsivity.
Purpose of the Study:
- To develop and demonstrate flexible thin-film InGaAs/InAlAs avalanche photodiodes.
- To enable reliable short-wave infrared detection using flexible photodetectors.
- To overcome the limitations of conventional photodiodes in flexible applications.
Main Methods:
- Utilized a mica substrate for device fabrication.
- Implemented a low-temperature bonding process.
- Optimized a fabrication process for thin-film InGaAs/InAlAs avalanche photodiodes.
Main Results:
- Achieved flexible InGaAs/InAlAs avalanche photodiodes.
- Demonstrated low dark current and good responsivity.
- Exhibited high multiplication gain, even under bending conditions.
Conclusions:
- Flexible InGaAs avalanche photodiodes offer promising performance for short-wave infrared detection.
- The developed devices maintain general performance when bent.
- This advancement enables a wider range of potential applications in flexible optical sensing and imaging.
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