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A polarization-sensitive photodetector based on a b-AsP/In2Se3 heterostructure.

Le Ju1, Binqian Zou1, Suofu Wang2

  • 1State Key Laboratory of Opto-Electronic Information Acquisition and Protection Technology, Key Laboratory of Opto-Electronic Information Acquisition and Manipulation of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei, Anhui, 230601, PR of China. mzhang@zjxu.edu.cn.

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This study presents a novel photodetector using black arsenic phosphorus and indium selenide van der Waals heterojunctions for sensitive, wide-band detection. The device achieves high performance across ultraviolet to mid-wave infrared spectra with fast response times.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Optoelectronics

Background:

  • Van der Waals (vdW) heterojunctions offer versatile platforms for advanced electronic and optoelectronic devices.
  • Polarization-sensitive infrared (IR) photoelectric detection is crucial for applications like optical communication and remote sensing.

Purpose of the Study:

  • To develop a high-performance photodetector based on a black arsenic phosphorus (b-AsP) and indium selenide (In2Se3) vdW heterojunction.
  • To achieve wide-band detection from solar-blind ultraviolet (SBUV) to mid-wave infrared (MWIR) spectra with polarization sensitivity.

Main Methods:

  • Fabrication of a mirror electrode-enhanced b-AsP/In2Se3 vdW heterojunction photodetector.
  • Characterization of the device's performance across a wide spectral range (SBUV to MWIR).
  • Evaluation of key performance metrics including photoresponsivity, specific detectivity, noise equivalent power, response times, and dichroic ratio.

Main Results:

  • The photodetector demonstrated wide-band detection capabilities from SBUV to MWIR.
  • Achieved excellent performance metrics: photoresponsivity (R) of 4129.3 A W⁻¹, specific detectivity (D*) of 2.8 × 10¹¹ cm Hz¹/² W⁻¹, and NEP of 2.8 × 10⁻¹⁵ W Hz⁻¹/².
  • Exhibited fast response times (rise time τr of 5.8 μs, decay time τd of 2.8 μs) and a high dichroic ratio of ~2.12.

Conclusions:

  • The developed b-AsP/In2Se3 vdW heterojunction photodetector shows promise for high-sensitivity and fast-speed polarization-sensitive detection.
  • This work provides a viable strategy for creating advanced polarization-sensitive detectors for various applications.
  • The device's performance across a broad spectral range highlights its potential in optical communication and sensing.