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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Updated: Jan 14, 2026

Flash Infrared Annealing for Perovskite Solar Cell Processing

Flash Infrared Annealing for Perovskite Solar Cell Processing

Published on: February 3, 2021

Co-Self-Assembled Interface Engineering Assisted for Bend-Resistant and Efficient Flexible Perovskite Solar Cells.

Chunlong Wang¹, Chu Zhang¹, Qingxue Wang²

¹New Energy Materials and Devices Laboratory, College of Materials and Chemistry, China Jiliang University (CJLU), Hangzhou, 310018, China.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)

|October 24, 2025

Summary

Flexible perovskite solar cells (F-PSCs) achieve higher efficiency and durability through a novel interface engineering strategy. This method reduces defects and enhances charge transfer, improving F-PSC performance and stability.

Keywords:

4‐nitrophenyl phosphate defect passivation flexible perovskite solar cells self‐assembly monolayer stability

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Area of Science:

Materials Science
Renewable Energy

Background:

Flexible perovskite solar cells (F-PSCs) offer excellent mechanical flexibility but are limited by interface defects.
Defects at the bottom interface of NiO_x/perovskite (PVK) hinder device performance improvements.

Purpose of the Study:

To engineer the NiO_x/PVK interface in F-PSCs using a co-self-assembled monolayer (Co-SAM) strategy.
To improve surface uniformity, hydrophilicity, and perovskite crystal orientation at the interface.
To mitigate interfacial defects and enhance charge transfer for better device performance and stability.

Main Methods:

Implemented a Co-SAM strategy by integrating 4-nitrophenyl phosphate (PNPP) with [4-(3,6-dimethyl-9H-carbazol-9-yl) butyl] phosphonic acid (Me-4PACz).
Engineered the NiO_x/PVK interface to enhance surface properties and promote favorable perovskite growth.
Investigated the role of PNPP in defect mitigation and PbI₂ capture.

Main Results:

Achieved enhanced surface uniformity and hydrophilicity of the NiO_x/Me-4PACz interface.
Promoted favorable crystal orientation of perovskite layers.
Significantly improved interfacial charge transfer efficiency, boosting F-PSC efficiency from 21.46% to 23.66%.
Demonstrated enhanced mechanical stability, retaining 80% efficiency after 10,000 bending cycles.
Showcased PNPP's capacity for PbI₂ capture, indicating potential for reduced lead leakage.

Conclusions:

The Co-SAM engineering strategy effectively addresses bottom-interface defects in F-PSCs.
Improved interface quality leads to higher power conversion efficiency and enhanced operational stability.
PNPP integration offers a promising approach for developing more stable and potentially lead-leakage-resistant perovskite solar cells.