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III-Nitride MEMS drum resonators on flexible metal substrates
A Kassem1, R Gujrati1, D Bourrier2
1CNRS, IRL 2958 Georgia Tech-CNRS, Metz, France.
Microsystems & Nanoengineering
|October 24, 2025
Summary
We developed a simple process to create flexible III-Nitride (III-N) MEMS resonators. This Self-Lift-Off and Transfer (SLOT) method uses a metal stressor to transfer III-N layers onto flexible substrates, enabling crack-free devices.
Area of Science:
- Materials Science
- Nanotechnology
- Mechanical Engineering
Background:
- III-Nitride (III-N) materials are crucial for microelectromechanical systems (MEMS) due to their unique electronic and mechanical properties.
- Fabricating III-N MEMS resonators on flexible substrates presents challenges in material transfer and maintaining structural integrity.
Purpose of the Study:
- To present a simple and efficient method for fabricating III-Nitride (III-N) mechanical resonators on flexible metal substrates.
- To demonstrate a Self-Lift-Off and Transfer (SLOT) process for creating crack-free III-N heterostructures on flexible platforms.
- To analyze the performance and mechanical properties of the fabricated III-N MEMS resonators.
Main Methods:
- Van der Waals epitaxy of III-N epilayers on a hexagonal-Boron Nitride (h-BN) release layer.
- Deposition of a thick metal stressor to initiate a one-step Self-Lift-Off and Transfer (SLOT) process.
- Local etching and electrode deposition to release self-standing III-N layers with integrated actuation.
- Characterization using optical profilometry, laser Doppler vibrometer, and Finite Element Method (FEM) simulations.
Main Results:
- Successfully transferred III-N heterostructures from sapphire growth wafers to flexible metal substrates using the SLOT process.
- Fabricated III-N MEMS drum resonators exhibiting static deflections and distinct vibration modes.
- FEM simulations provided insights into mechanical properties and estimated stress in the released GaN and AlGaN layers.
- Demonstrated a straightforward approach for cost-effective, flexible, and crack-free III-N MEMS resonators.
Conclusions:
- The developed SLOT process is a practical and efficient method for fabricating flexible III-N MEMS resonators.
- This technique enables the production of high-quality, crack-free III-N structures on versatile metal substrates.
- The fabricated resonators show promising characteristics for various MEMS applications requiring flexibility and robustness.
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