III-Nitride MEMS drum resonators on flexible metal substrates

A Kassem1, R Gujrati1, D Bourrier2

  • 1CNRS, IRL 2958 Georgia Tech-CNRS, Metz, France.

PubMed
Summary

We developed a simple process to create flexible III-Nitride (III-N) MEMS resonators. This Self-Lift-Off and Transfer (SLOT) method uses a metal stressor to transfer III-N layers onto flexible substrates, enabling crack-free devices.