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Ultra-Sensitive Negative Photoconductivity Transistors via Long-Afterglow Doping for All-Optical Encryption.

Jiangli Han1,2, Ding Ma1, Lixian Jiang1

  • 1Key Lab of Organic Optoelectronics & Molecular Engineering of Ministry of Education, State Key of Laboratory of Flexible Electronics Technology, Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China.

Advanced Materials (Deerfield Beach, Fla.)
|October 25, 2025
PubMed
Summary
This summary is machine-generated.

This study introduces a bulk doping strategy for high-performance negative photoconductivity transistors (NPTs) using organic long-afterglow materials. These NPTs demonstrate exceptional photosensitivity and detectivity, enabling applications in secure neuromorphic systems.

Keywords:
information encryption/decryptionlong‐lived charge separationnegative photoconductivity transistorsorganic long‐afterglow dopantsorganic optoelectronic synapses

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Area of Science:

  • Materials Science
  • Organic Electronics
  • Optoelectronics

Background:

  • Negative photoconductivity (NPC) devices offer fast response and broadband spectral adaptability for optoelectronics.
  • Conventional planar NPC devices suffer from poor performance due to interfacial defects impacting carrier dynamics.

Purpose of the Study:

  • To develop high-performance negative photoconductivity transistors (NPTs) using an innovative bulk doping strategy.
  • To overcome limitations of planar NPC devices by addressing interfacial defects.

Main Methods:

  • Incorporated organic long-afterglow materials into polymer semiconductors via bulk doping.
  • Investigated the generation of long-lived charge separation states and carrier trapping dynamics.
  • Utilized the developed NPTs to emulate negative synaptic functionalities and integrate into a recurrent neural network (RNN).

Main Results:

  • Achieved persistent NPC with ultrahigh photosensitivity (5.29 × 10⁶) and detectivity (3.40 × 10¹³ Jones).
  • Demonstrated bulk doping creates abundant trapping sites for efficient intralayer carrier recombination.
  • Successfully emulated negative synaptic functionalities and achieved 91% accuracy in all-optical encryption/decryption using an RNN.

Conclusions:

  • The bulk doping strategy provides a generalizable paradigm for high-performance NPC devices.
  • Developed NPTs show significant potential for next-generation optoelectronics and secure neuromorphic systems.
  • This approach overcomes interfacial defect limitations in conventional NPC devices.