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Related Concept Videos

P-N junction01:11

P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Phase Transitions: Sublimation and Deposition02:33

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Some solids can transition directly into the gaseous state, bypassing the liquid state, via a process known as sublimation. At room temperature and standard pressure, a piece of dry ice (solid CO2) sublimes, appearing to gradually disappear without ever forming any liquid. Snow and ice sublimate at temperatures below the melting point of water, a slow process that may be accelerated by winds and the reduced atmospheric pressures at high altitudes. When solid iodine is warmed, the solid sublimes...
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A Descriptor-Driven Thermodynamic Framework for Achieving Unidirectional Nucleation in 2D Material Epitaxy.

Ruikang Dong1,2, Yilei Wu2, Chunjin Ren1,2

  • 1Suzhou Laboratory, Suzhou 215123, China.

ACS Nano
|October 26, 2025
PubMed
Summary

Achieving unidirectional nucleation for single-crystal two-dimensional (2D) materials is now possible with a new framework. This approach uses thermodynamic modeling and substrate engineering to control nucleation, enabling wafer-scale epitaxy.

Keywords:
2D materialsdescriptorsurface interactionthermodynamic modelingvan der Waals epitaxy

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Area of Science:

  • Materials Science
  • Surface Science
  • Nanotechnology

Background:

  • Wafer-sized single-crystal epitaxy of two-dimensional (2D) materials is essential for advanced applications.
  • Multidirectional nucleation, caused by symmetry mismatches, hinders achieving large-scale single-crystal growth.
  • Existing methods often lack a universal approach for diverse 2D materials.

Purpose of the Study:

  • To develop a universal framework for enabling unidirectional nucleation and epitaxy in diverse 2D materials.
  • To overcome the limitations imposed by multidirectional nucleation in 2D material growth.
  • To provide guidelines for achieving wafer-scale single-crystal epitaxy.

Main Methods:

  • Integrated thermodynamic modeling to classify nucleation regimes (edge-dominated vs. surface-dominated).
  • Developed a quantitative epitaxial descriptor based on lattice mismatch and interfacial spacing.
  • Employed substrate-step engineering for controlled nucleation.

Main Results:

  • The framework successfully predicts nucleation behavior for graphene, hexagonal boron nitride (h-BN), and molybdenum disulfide (MoS2).
  • Identified that surface-dominated nucleation requires precise alignment of terrace steps with the epitaxial axis.
  • Demonstrated that the epitaxial descriptor eliminates the need for computationally expensive first-principles calculations.

Conclusions:

  • Established a universal, hierarchical framework for unidirectional nucleation and epitaxy across various 2D materials.
  • Provided a general protocol for substrate-step engineering to promote controlled nucleation.
  • Enabled guidelines for achieving wafer-scale single-crystal epitaxy of 2D materials.