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Scalable InAs/InGaAs DWELL structures for broadband infrared emission spanning the E- to O-band
Driss Mouloua1, Mickael Martin2, Bouraoui Ilahi3
1Univ. Grenoble Alpes, CNRS, CEA-LETI, MINATEC, Grenoble INP, LTM, F-38054, Grenoble, France. driss.mouloua@cea.fr.
Scientific Reports
|October 28, 2025
Summary
Optimizing MOCVD growth conditions for InAs/InGaAs quantum dots-in-a-well (DWELL) structures precisely controls quantum dot size and density. This enables tunable infrared emission from 1200-1450 nm for advanced optoelectronics.
Area of Science:
- Materials Science
- Semiconductor Physics
- Nanotechnology
Background:
- Quantum dots-in-a-well (DWELL) heterostructures are crucial for optoelectronic devices.
- Precise control over quantum dot (QD) properties is essential for tunable infrared emission.
Purpose of the Study:
- To optimize Metalorganic Chemical Vapor Deposition (MOCVD) growth conditions for InAs/InGaAs DWELL structures.
- To investigate the effect of growth parameters and capping layer composition on QD optical properties.
- To achieve tunable infrared emission wavelengths for advanced applications.
Main Methods:
- Optimization of MOCVD parameters: As/In ratio, growth temperature, deposition duration.
- Utilized photoluminescence spectroscopy to analyze optical properties.
- Employed numerical modeling to understand structure-property relationships.
Main Results:
- Achieved accurate control over quantum dot size and density.
- Demonstrated tunable infrared emission wavelengths from 1200 to 1450 nm.
- Identified a linear correlation between In concentration in capping layers and emission wavelength.
Conclusions:
- Growth parameter optimization is critical for engineering DWELL heterostructures.
- The In content of strain-reducing cap layers significantly influences QD emission characteristics.
- This work facilitates the integration of DWELL structures into advanced optoelectronic and quantum technologies.
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