Related Experiment Video
Updated: Jan 13, 2026

Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
Construct a Heterojunction Interface to Induce and Complete Hole-Dominated Cascade Reaction
Yi Ren1, Yulin Huang1, Ziye Zheng1
1Shandong Key Laboratory of Synergistic Control of Complex Multi-Media Pollution, School of Environmental Science and Engineering, Shandong University, Qingdao, 266237, China.
Abstract:
Carrier separation efficiency influences the final reactive oxygen species product of the cascade reaction, and constructing a heterojunction interface is an ideal strategy to improve it. Herein, a self-sufficient photo-Fenton system is engineered using a CuxO/CuS/ZnIn2S4 heterojunction, which enables the directional generation of sufficient singlet oxygen (1O2) via a hole-dominated cascade reaction, achieving efficient degradation of amoxicillin. The CuS interface between CuxO and ZnIn2S4 originates from the in situ transformation of CuxO, and the stepwise presence of different components during the XRD, XPS, and TEM structure characterization confirms it. This heterojunction interface induces a band structure from initial type I to S-scheme, optimizing carrier separation efficiency and transfer pathway, which matches with hole-dominated cascade reactions. Consequently, H2O2 is in situ produced via water oxidation reaction and eventually converted into 1O2 by highly active holes. In addition, the CuS interface prevents amoxicillin in the aqueous system from directly reacting with holes while ensuring that H2O molecules adequately participate in the cascade reaction. In summary, the tailored heterojunction interface boosts carrier separation efficiency, driving the completion of the hole-dominated cascade reaction. This process facilitates the directional generation of abundant 1O2 for the efficient degradation of contaminants.
More Related Videos
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
P-N junction
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Carrier Generation and Recombination
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
[4+2] Cycloaddition of Conjugated Dienes: Diels–Alder Reaction

