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Low-dimensional templates and delayed crystallization for high-quality tin-based perovskite films and
Yanqiu Wu1,2, Shuzhang Yang1, Enlong Li1
1State Key Laboratory of Photovoltaic Science and Technology, Institute of Optoelectronics, College of Future Information Technology, Fudan University, Shanghai, China.
Nature Communications
|October 29, 2025
Summary
This study introduces a method to control the crystallization of tin-based perovskites, enhancing their performance. The new approach leads to more stable and efficient semiconductor devices.
Area of Science:
- Materials Science
- Solid-State Chemistry
- Semiconductor Physics
Background:
- Quasi-2D tin-based perovskites show promise as p-type semiconductors.
- Their practical application is hindered by structural disorder and defects due to competing phase growth.
- Ion migration and instability are also key challenges.
Purpose of the Study:
- To develop a method for precise crystallization control of tin-based perovskites.
- To improve charge transport properties and device stability.
- To overcome limitations in low-dimensional tin perovskite phase formation.
Main Methods:
- Incorporation of phenethylammonium thiocyanate (PEASCN) to form specific low-dimensional templates.
- Substitution of formamidinium iodide (FAI) with formamidinium formate (FAHCOO) and ammonium iodide (NH4I).
- Controlled annealing to guide the growth of high-dimensional phases.
Main Results:
- Preferential formation of PEA2FAn-1SnnI3n-1SCN2 (n=2) templates was achieved.
- Suppression of 3D FASnI3 growth and precise crystallization control were enabled.
- Vertically oriented films with reduced defects and enhanced charge transport were fabricated.
Conclusions:
- The developed method effectively regulates crystallization kinetics in tin-based perovskites.
- High-performance, stable tin-based perovskite field-effect transistors with high mobility and on/off ratios were realized.
- This approach offers a viable strategy for advancing tin-based perovskite semiconductor technology.
