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Optimizing Annealing Temperature for Enhanced Electrical Performance and Stability of Solution-Processed In2O3

Taehui Kim1, Seullee Lee2, Ye-Won Lee2

  • 1School of Semiconductor Display Technology, Hallym University, Chuncheon 24252, Republic of Korea.

Micromachines
|October 29, 2025
PubMed
Summary
This summary is machine-generated.

Optimizing annealing temperature for indium oxide (In2O3) thin films is crucial for high-performance electronics. A 450 °C annealing temperature yielded the best balance of electrical properties and stability in In2O3 thin-film transistors (TFTs).

Keywords:
Raman-spectroscopyhysteresisindium oxidesolution-processedthermal annealingthin-film transistor

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Nanotechnology

Background:

  • Solution-processed indium oxide (In2O3) thin films are promising for next-generation electronics.
  • Thermal annealing is a critical step influencing film properties and device performance.

Purpose of the Study:

  • To investigate the impact of post-deposition thermal annealing temperature on In2O3 thin films.
  • To determine the optimal annealing conditions for high-performance In2O3-based thin-film transistors (TFTs).

Main Methods:

  • Thermogravimetric analysis (TGA) guided the selection of annealing temperatures (350, 450, 550 °C).
  • Characterization techniques included UV-Vis spectroscopy, AFM, Raman spectroscopy, and Hall-effect measurements.
  • Evaluation focused on optical, morphological, crystalline, and electrical properties.

Main Results:

  • The In2O3 film annealed at 450 °C showed a field-effect mobility of 4.28 cm²/V·s and an on/off ratio of 2.15 × 10⁷.
  • Hysteresis voltages decreased with increasing annealing temperature (3.11 V at 350 °C, 1.80 V at 450 °C, 0.92 V at 550 °C).
  • The 450 °C annealing condition presented an optimal trade-off between performance and stability.

Conclusions:

  • Post-deposition annealing temperature significantly affects the properties of solution-processed In2O3 films.
  • An annealing temperature of 450 °C is optimal for fabricating high-performance and stable In2O3 TFTs.
  • These findings support the use of optimized In2O3 films in advanced oxide electronics.