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UV–Vis Spectrometers

UV–Vis Spectrometers

The absorbance of UV and visible (UV–visible) radiations is measured using a UV–visible spectrophotometer. Deuterium lamps, which emit UV radiation, and tungsten lamps, which produce radiation in the visible region, are used as light sources in UV–visible spectrophotometers. A monochromator or prism is used for diffraction grating, i.e., to split the incoming radiation into different wavelengths. A system of slits is used to focus the desired wavelength on the sample cell.

Ultraviolet and Visible (UV–Vis) Spectroscopy: Overview

Ultraviolet and Visible (UV–Vis) Spectroscopy: Overview

Ultraviolet–visible (UV–visible or UV–Vis) spectroscopy is an analytical technique that investigates the interaction between matter and UV–Vis light within the electromagnetic spectrum. This method is widely used for its versatility, simplicity, and relatively quick data acquisition, making it valuable for both qualitative and quantitative analysis. When UV–Vis radiation passes through a material, molecules absorb light depending on the energy required for...

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Updated: Jan 13, 2026

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

Published on: January 4, 2016

Advances in Silicon-Based UV Light Detection.

Arif Kamal^1,2, Seongin Hong^1,2,3, Heongkyu Ju^2,3

¹Department of Semiconductor Engineering, Gachon University, Seongnam-si 13120, Republic of Korea.

|October 29, 2025

Summary

This summary is machine-generated.

Silicon (Si) is cost-effective for visible light detection but struggles with ultraviolet (UV) light due to its properties. This review explores Si-based and hybrid UV photodetectors, highlighting strategies to overcome limitations for improved UV detection.

Keywords:

UV photodetector responsivity silicon surface engineering wide bandgap

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Last Updated: Jan 13, 2026

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Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

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Published on: November 9, 2015

Area of Science:

Semiconductor Physics
Optoelectronics
Materials Science

Background:

Silicon (Si) is a mature, cost-efficient semiconductor for visible and near-infrared photodetection.
Si's narrow bandgap and surface defects hinder effective ultraviolet (UV) light detection.
Existing UV detection methods often involve wide-bandgap semiconductors or hybrid Si structures.

Purpose of the Study:

To review UV photodetector mechanisms and technologies.
To discuss challenges and solutions for Si-based UV detection.
To explore hybrid wide-bandgap semiconductor/Si structures for enhanced UV photodetection.

Main Methods:

Review of existing literature on UV photodetectors.
Categorization of UV detectors by detection mechanisms.
Analysis of surface defect mitigation techniques in Si.
Examination of hybrid wide-bandgap semiconductor and Si structures.

Main Results:

Silicon's intrinsic properties present challenges for UV detection.
Wide-bandgap semiconductors offer UV sensitivity but require integration with Si.
Hybrid structures show synergistic effects, improving UV detection capabilities.
Surface defect minimization is crucial for effective Si-based UV detectors.

Conclusions:

Si-based UV photodetectors require strategies to overcome intrinsic limitations.
Hybrid wide-bandgap semiconductor/Si devices offer a promising path for advanced UV detection.
Further research into synergistic effects and defect control is needed for next-generation UV detectors.