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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Effects of Switching on the 2-DEG Channel in Commercial E-Mode GaN-on-Si HEMT

Roberto Baca-Arroyo1

  • 1Department of Electronics, National Polytechnic Institute, School of Mechanical and Electrical Engineering, Mexico City 07738, Mexico.

Micromachines
|October 29, 2025
PubMed
Abstract

Keywords:
didactic physics-based modellow-power GaN transistorp-GaN gate HEMTp-GaN/n-AlGaN/i-GaN heterojunctionswitching conduction mode

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