Total Solution-Processed Zr: HfO₂ Flexible Memristor with Tactile Sensitivity: From Material Synthesis to Application...

In the pursuit of advanced non-volatile memory technologies, ferroelectric memristors have attracted great attention. However, traditional perovskite ferroelectric materials are hampered by environmental pollution, limited applicability, and the complexity and high cost of conventional vacuum deposition methods. This has spurred the exploration of alternative materials and fabrication strategies. Herein, a flexible Pt/Zr: HfO₂ (HZO)/graphene oxide (GO)/mica memristor is successfully fabricated using the total solution-processed method. The interfacial oxygen competition mechanism between the HZO layer and the GO bottom electrode facilitates the formation of the HZO ferroelectric phase. The as-prepared device exhibits a switching ratio of approximately 150 and can maintain eight distinct resistance levels, and it can also effectively simulate neural responses. By integrating the ferroelectric polarization principle and the piezoelectric effect of HZO, along with the influence of GO, the performance variations of the as-prepared device under mechanical and thermal influences are further explored. Notably, Morse code recognition is achieved by utilizing the device's pressure properties and setting specific press rules. The as-prepared device can accurately convert and store information, opening new avenues for non-volatile memory applications in silent communication and promoting the development of wearable electronics.