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Updated: Jan 12, 2026

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
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Room-Temperature Ferroelectricity of Bi2O2Se in the Two-Dimensional Limit
Lingyuan Kong1,2, Wei Li1,2, Kai Hu1
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
None:
Atomic-scale two-dimensional (2D) ferroelectrics are of great interest for advancing next-generation high-performance electronics. Here, we report the discovery of room-temperature (RT) ferroelectricity in ultrathin 2D Bi2O2Se (BOS) films grown by molecular beam epitaxy. These films exhibit degenerate semiconducting characteristics through a unique self-modulated doping mechanism featuring in-plane electron confinement and a high RT mobility of 311 cm2 V-1 s-1. Remarkably, robust out-of-plane ferroelectricity persists down to the single-unit-cell limit. Through atomic-scale characterization, we reveal that the ferroelectric polarization stems from electric-field-modulated dipole ordering associated with Se atom displacements. This study confirms the ferroelectricity of ultrathin BOS films, thereby opening new avenues for the development of innovative nanoscale devices and the engineering of quantum materials.
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