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Published on: April 15, 2013
Modulating electronic transport properties of wafer-scale vapor-liquid-solid grown tungsten nitride by a vacuum
Yuan-Chih Hung1, Sheng-Zong Chen2, Wei-Chen Lin3,4
1Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan City 320, Taiwan.
Abstract:
We study the electronic transport properties of W5N6by vacuum gentle heating methods, which are useful ways to probe the electronic transport properties in highly sensitive 2D materials. Importantly, we found stable nearest-neighbor hopping behavior and Efros-Shklovskii variable range hopping behavior by accumulating vacuum gentle heating time, which is highly consistent with previous results in paramagnetic W5N6to pave the way for applying to future magnetic sensing devices in industrial production aspects due to its highly stable atmospheric chemical doping on the surface, large-scale, ultra-thin, and resilient properties.

