DFT-guided additive design for BaTiO3-based MLCCs exhibiting excellent insulation reliability
Gi Joo Bang1, Hyo-Ki Hong1, Seong Hun Kim1
1Materials Computation Group, Corporate R&D Institute, Samsung Electro-Mechanics Co., Ltd, Suwon, Gyeonggi-Do, 16674, Republic of Korea. gijoo.bang@samsung.com.
Abstract:
Oxygen vacancies (VOs) degrade the insulation reliability of BaTiO3-based multilayer ceramic capacitors (MLCCs). Density functional theory calculations reveal that Ce doped at the B-sites (CeTi) of BaTiO3 strongly stabilizes VOs, effectively suppressing VO migration. This stabilization originates from electron trapping by CeTi, which reduces Ce4+ to Ce3+ and substantially increases the involved ionic radius. The resulting size mismatch reduces the stability of CeTi, enabling strong interaction with adjacent VOs. In co-doped BaTiO3, Ce-Er combination effectively traps VOs by promoting electron trapping at Ce. Meanwhile, Ce-Mn co-doping leads to preferential electron trapping by Mn, resulting in slightly lower VO stabilization. To explain variations in electron trapping, we propose a descriptor based on trap-state characteristics, enabling prediction of the preferred trapping site. Overall, these findings provide atomic-scale insights for designing additives that enhance the insulation reliability of MLCCs.


