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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

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Defect Engineering in Large-Scale CVD-Grown Hexagonal Boron Nitride: Formation, Spectroscopy, and Spin Relaxation

Ivan V Vlassiouk¹, Yueh-Chun Wu², Alexander Puretzky¹

¹Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.

Small (Weinheim an Der Bergstrasse, Germany)

|October 31, 2025

Summary

This summary is machine-generated.

Generating specific defects in hexagonal boron nitride (hBN) is key for quantum devices. This study shows defect type depends on particle bombardment, offering a path for scalable quantum photonic device fabrication.

Keywords:

CVD ODMR Raman bombardment defects hBN photoluminescence

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Area of Science:

Quantum photonics
Materials science
Solid-state physics

Background:

Optically active defects in hexagonal boron nitride (hBN) are crucial for quantum photonic devices.
Scalable, on-demand generation of desired defect types in hBN films remains a significant challenge.

Purpose of the Study:

To investigate the on-demand generation of negative boron vacancy defects (V_B^-) in large-area chemical vapor deposition (CVD)-grown hBN.
To understand the influence of bombarding particles and irradiation conditions on defect formation.
To differentiate between various optically active and dark paramagnetic defect types.

Main Methods:

Irradiation of suspended and substrate-supported hBN films with ions, neutrons, and electrons.
Spectroscopic analysis and optically detected magnetic resonance (ODMR) measurements.
Correlation of defect properties with optical emission wavelengths and spin parameters.

Main Results:

Defect formation in suspended hBN is highly dependent on the type of bombarding particles and irradiation parameters.
Substrate-supported hBN defect formation is complex, influenced by substrate-generated secondary particles and hBN thickness.
Boron vacancies (V_B^-) emitting at 800 nm were distinguished from anti-site nitrogen vacancy defects (N_BV_N) emitting at 650 nm.
"Dark" paramagnetic defects were identified, impacting spin-lattice relaxation time (T₁) and zero-field splitting.

Conclusions:

Precise engineering of defect formation in large-scale CVD-grown hBN is achievable.
The findings pave the way for the scalable fabrication of quantum photonic devices using tailored defects in hBN.