Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

1.1K
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
1.1K
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

1.4K
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
1.4K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

893
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
893
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

773
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
773
MOSFET01:16

MOSFET

1.1K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.1K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

548
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
548

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Association between neutrophil to high-density lipoprotein cholesterol ratio and abdominal aortic calcification in US adults: A cross-sectional study.

Medicine·2026
Same author

Establishment and Characterization of a Stable hERG Cell Line for High-Throughput Drug Cardiac Safety Screening.

International journal of molecular sciences·2026
Same author

Immune Ageing Clocks: A Methods-Oriented Review of Tasks, Modalities, Models, and Recalibration.

Cells·2026
Same author

Status and influencing factors of resilience among patients with lung cancer undergoing chemotherapy: a qualitative study.

Supportive care in cancer : official journal of the Multinational Association of Supportive Care in Cancer·2026
Same author

Effects of Adding Potassium Permanganate into the Electrolyte on the Properties of Microarc Oxidation Coating Developed on Pure Copper.

Langmuir : the ACS journal of surfaces and colloids·2026
Same author

Isolation, characterization, and anti-neuroinflammatory activity of sesquiterpenoids from Pogostemon esquirolii.

Phytochemistry·2025

Related Experiment Video

Updated: Jan 12, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

651

Transistor-like iontronics device based on MXene/Bi 2D heterojunction for human-machine intelligent interaction.

Hailin Lu1, Mengjie Wang1, Zhiwei Chen1

  • 1School of Integrated Circuits, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China.

Science Bulletin
|October 31, 2025
PubMed
Summary

A novel MXene/Bi 2D heterojunction iontronics sensor enables precise human-machine intelligent interaction (HMII). This self-powered device achieves high accuracy in decoding hand gestures and controlling robotic hands via tactile feedback.

Keywords:
Human-machine intelligent interactionIontronics deviceMXene/Bi 2D heterojunctionRobotic manipulationsTactile sensing

More Related Videos

Bridging the Bio-Electronic Interface with Biofabrication
16:38

Bridging the Bio-Electronic Interface with Biofabrication

Published on: June 6, 2012

17.3K
Bidirectional Electrical and Optoelectronic Interfaces in Healthy and Ischemic Ex Vivo Rat Hearts
08:33

Bidirectional Electrical and Optoelectronic Interfaces in Healthy and Ischemic Ex Vivo Rat Hearts

Published on: July 18, 2025

762

Related Experiment Videos

Last Updated: Jan 12, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

651
Bridging the Bio-Electronic Interface with Biofabrication
16:38

Bridging the Bio-Electronic Interface with Biofabrication

Published on: June 6, 2012

17.3K
Bidirectional Electrical and Optoelectronic Interfaces in Healthy and Ischemic Ex Vivo Rat Hearts
08:33

Bidirectional Electrical and Optoelectronic Interfaces in Healthy and Ischemic Ex Vivo Rat Hearts

Published on: July 18, 2025

762

Area of Science:

  • Materials Science
  • Robotics
  • Biomedical Engineering

Background:

  • Human-machine intelligent interaction (HMII) is advancing healthcare and virtual reality.
  • Current HMII systems often require complex multi-sensor setups for precise robotic control.
  • Challenges remain in achieving sensitive and accurate human-machine interfaces.

Purpose of the Study:

  • To develop a novel, flexible, all-solid-state, self-powered iontronics pressure sensor.
  • To construct a deep-learning-assisted single-device HMII system.
  • To demonstrate precise control of robotic hands and decoding of hand gestures using the developed sensor.

Main Methods:

  • Fabrication of a transistor-like iontronics sensor using a MXene/Bi 2D heterojunction.
  • Integration of the sensor into a deep-learning-assisted HMII system.
  • Testing the sensor's performance in monitoring skin deformations, decoding gestures, and controlling robotic hands.

Main Results:

  • The iontronics sensor demonstrated a fast response time (66.59 ms) and long lifetime (50,000 cycles).
  • The HMII system achieved 95.83% accuracy in recognizing sophisticated hand gestures.
  • The system enabled precise robotic hand control with tactile perception feedback, monitoring nerve-triggered skin deformations.

Conclusions:

  • The novel MXene/Bi 2D heterojunction iontronics sensor offers a promising solution for advanced HMII.
  • This single-device approach simplifies HMII systems by reducing sensor redundancy.
  • The technology significantly enhances human-machine perceptual interaction for applications in healthcare and robotics.