Heterodimensional Epitaxy of CsSnI3 Microcrystalline Cubes for Bright and Efficient Near-Infrared Light-Emitting
1School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
Advanced Materials (Deerfield Beach, Fla.)
|November 3, 2025
Summary
Researchers developed a new method to create bright and efficient near-infrared light emitters using tin-halide perovskites. This strategy overcomes challenges like tin oxidation and defects, leading to improved performance in light-emitting diodes.
Area of Science:
- Materials Science
- Optoelectronics
- Solid-State Chemistry
Background:
- Tin-halide perovskites are promising for near-infrared (NIR) emission due to their eco-friendly nature, suitable bandgap, and rapid recombination.
- Challenges in tin perovskite films include easy Sn2+ oxidation and poor crystallization, leading to small grains and high defect concentrations, hindering efficient light emission.
Purpose of the Study:
- To develop a strategy for growing high-quality, single-crystalline tin-halide perovskite microstructures for efficient NIR emission.
- To address the issues of Sn2+ oxidation and defect density in tin perovskite films.
Main Methods:
- A surface-templated growth strategy was employed to create heterodimensional epitaxial cesium tin iodide (CsSnI3) microcrystalline cubes.
- This method involved forming single-crystalline 3D domains with a 2D epitaxial passivation layer at the buried interface.
Main Results:
- The strategy effectively suppressed tin oxidation and minimized defect density in the CsSnI3 microcrystals.
- The fabricated NIR Light-Emitting Diode (LED) demonstrated a high radiance of 152 W sr-1 m-2 and an external quantum efficiency (EQE) of 8.11%.
Conclusions:
- The developed surface-templated approach enables the fabrication of bright and efficient lead-free NIR light emitters.
- This work sets a new benchmark for tin-halide perovskite-based NIR LEDs, overcoming previous limitations.
Keywords:
2D structurecrystal growth kinetic controlheterodimensional epitaxylight emitting diodeperovskite

