Optical properties of InGaAsN quantum well-based microlasers passivated by SiO₂ sol-gel film

Low-temperature, plasma-free method of sol-gel SiO₂ passivation coating film was applied to InGaAsN quantum well microlasers emitting in the 1.2 µm spectral range. A marked enhancement in their optical performance under optical pumping and current injection was found. For optically pumped microlasers, room-temperature lasing was achieved along with a substantial increase in photoluminescence intensity. In the case of electrically injected microlasers, the threshold current density was significantly reduced from 45.8 kA/cm² to 20.1 kA/cm². The demonstrated approach offers broad prospects for the development of high-performance InGaAs(N) microlasers for applications in nanophotonics and optoelectronics.