Related Experiment Video
Updated: Jan 12, 2026

Author Spotlight: Microfluidic Channel-Based Soft Electrodes and Their Application in Capacitive Pressure Sensing
Published on: March 17, 2023
Stretchable complementary integrated electronics based on elastic dual-type transistors
Yongcao Zhang1,2, Kyoseung Sim3, Hyunseok Shim4
1Materials Science and Engineering Program, University of Houston, Houston, TX 77204, USA.
None:
Complementary integrated circuits in an elastic format are essential for systems toward emerging applications in wearable health monitors, soft robotics, and implantable medical devices. However, their development is very nascent, largely owing to the imbalance of p- and n-type elastic transistors. Here, we report fully stretchable complementary integrated electronics combining elastic n-type transistors based on metallic carbon nanotube (CNT)-oped poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} with p-type transistors using semiconducting CNT networks. The layered elastomer-semiconductor-elastomer architecture provides both type transistors with stable, well-matched electrical characteristics up to 50% strain. Using these components, we demonstrate stretchable digital logic gates-including inverters, NAND, and NOR-which retain function under large strain. As a system-level demonstration, a complementary inverter active matrix integrated with a single-electrode triboelectric nanogenerator array realizes a stretchable tactile sensing skin. The stretchable complementary integrated electronics demonstrated here hold promise in many fields, particularly these require seamless integration with dynamic living systems.
More Related Videos
Related Concept Videos
Design Example: Capacitance Multiplier Circuit
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
Field Effect Transistor
Types of Semiconductors
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

