Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

1.5K
In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
1.5K
Field Effect Transistor01:29

Field Effect Transistor

1.1K
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
1.1K
Types of Semiconductors01:20

Types of Semiconductors

1.3K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.3K
Biasing of FET01:22

Biasing of FET

660
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
660
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

882
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
882
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

535
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
535

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Tissue-adhesive hydrogel optical fiber for peripheral optogenetic neuromodulation.

Nature communications·2026
Same author

Fully Stretchable Ionically Tunable Organic Electrochemical Transistors for Wearable Adaptive Logic Bioelectronics.

ACS nano·2026
Same author

Untethered thin-film neurostimulator wrapped around tiny nerve trunks for wireless neuromodulation.

Science advances·2026
Same author

A rubbery semiconducting heterojunction film for fully rubbery multiplexed near-infrared phototransistor arrays.

Science advances·2026
Same author

Recycling Organic Semiconductors: Toward Sustainable Emerging Electronics.

ACS materials Au·2026
Same author

Drawn-on-skin electronic tattoo as a closed-loop sensing-stimulation system for the muscles.

Science advances·2026
Same journal

Erratum for the Research Article "Assessing the health risks of rice cadmium content standards in China" by H. Chu <i>et al</i>.

Science advances·2026
Same journal

Erratum for the Research Article "Developmental regulation of Erk signaling by mitotic kinases" by F. Chen <i>et al</i>.

Science advances·2026
Same journal

Magnetically levitated metasurface enabling tangible and bidirectional human-machine interaction.

Science advances·2026
Same journal

A general photoinduced manganese-catalyzed platform for the sequential difunctionalization of [1.1.1]propellane.

Science advances·2026
Same journal

Turning sound and force into light with AlN:Mn<sup>2+</sup> mechanoluminescence.

Science advances·2026
Same journal

Extreme dominance of Earth-origin heavy ions in the intense ring current near the Earth during the May 2024 super geomagnetic storm.

Science advances·2026
See all related articles

Related Experiment Video

Updated: Jan 12, 2026

Author Spotlight: Microfluidic Channel-Based Soft Electrodes and Their Application in Capacitive Pressure Sensing
05:57

Author Spotlight: Microfluidic Channel-Based Soft Electrodes and Their Application in Capacitive Pressure Sensing

Published on: March 17, 2023

4.0K

Stretchable complementary integrated electronics based on elastic dual-type transistors.

Yongcao Zhang1,2, Kyoseung Sim3, Hyunseok Shim4

  • 1Materials Science and Engineering Program, University of Houston, Houston, TX 77204, USA.

Science Advances
|November 7, 2025
PubMed
Summary
This summary is machine-generated.

Researchers developed fully stretchable complementary integrated electronics using carbon nanotube (CNT)-based transistors. This breakthrough enables stable, elastic digital logic gates and tactile sensing skins for advanced wearable and implantable devices.

More Related Videos

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh
11:09

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh

Published on: June 23, 2017

10.7K
A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles
06:21

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles

Published on: March 13, 2017

10.8K

Related Experiment Videos

Last Updated: Jan 12, 2026

Author Spotlight: Microfluidic Channel-Based Soft Electrodes and Their Application in Capacitive Pressure Sensing
05:57

Author Spotlight: Microfluidic Channel-Based Soft Electrodes and Their Application in Capacitive Pressure Sensing

Published on: March 17, 2023

4.0K
Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh
11:09

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh

Published on: June 23, 2017

10.7K
A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles
06:21

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles

Published on: March 13, 2017

10.8K

Area of Science:

  • Materials Science
  • Electronics Engineering
  • Nanotechnology

Background:

  • Elastic complementary integrated circuits are crucial for advanced applications like wearable health monitors and soft robotics.
  • Current development is limited by an imbalance in p- and n-type elastic transistors.

Purpose of the Study:

  • To develop fully stretchable complementary integrated electronics by overcoming the limitations of existing elastic transistors.
  • To demonstrate the functionality of these new electronics in digital logic gates and tactile sensing applications.

Main Methods:

  • Fabrication of elastic n-type transistors using metallic carbon nanotube (CNT)-doped polymers and p-type transistors using semiconducting CNT networks.
  • Utilizing a layered elastomer-semiconductor-elastomer architecture for transistor fabrication.
  • Integration of transistors to create stretchable digital logic gates (inverters, NAND, NOR) and a tactile sensing skin.

Main Results:

  • Achieved stable and well-matched electrical characteristics for both n- and p-type transistors up to 50% strain.
  • Demonstrated functional stretchable digital logic gates that maintain performance under significant strain.
  • Successfully realized a stretchable tactile sensing skin using a complementary inverter active matrix and a triboelectric nanogenerator.

Conclusions:

  • The developed stretchable complementary integrated electronics offer a promising solution for systems requiring seamless integration with dynamic living systems.
  • This advancement paves the way for next-generation wearable, robotic, and implantable electronic devices.