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First-principles study on the electronic, transport, optical and mechanical properties of cubic boron phosphide
Jing-Yi Xia1, Juan Gao2, Zheng-Tang Liu3
1Bond and Band Engineering Group, School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, 610031, People's Republic of China.
Context:
This study employs density functional theory (DFT) to investigate the structural, electronic, transport, optical, and mechanical properties of cubic boron phosphide (c-BP), intending to elucidate its structure-property relationships. The findings reveal that c-BP exhibits an indirect bandgap of 1.93 eV. The valence band maximum (VBM) shows triple degeneracy and pronounced dispersion, resulting in the formation of light-hole bands that provide additional transport channels for holes. A notably high hole mobility of 888.34 cm2·V⁻1·s⁻1 is achieved, demonstrating excellent p-type transport characteristics. Furthermore, c-BP possesses very low dielectric loss, broad optical transparency, and mechanical properties characterized by high stiffness and brittleness. This research not only deepens the mechanistic understanding of c-BP's multifunctional behavior but also provides theoretical underpinnings for the design of advanced semiconductor devices.
Methods:
All calculations were performed within the density functional theory (DFT) framework implemented in the CASTEP code, employing norm-conserving pseudopotentials. Structural relaxation used the GGA-PW91 functional, while electronic and optical properties were computed with the HSE06 hybrid functional.
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