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Updated: Jan 12, 2026
07:42
Optimizing Magnetic Force Microscopy Resolution and Sensitivity to Visualize Nanoscale Magnetic Domains
Published on: July 20, 2022
3.2K
Zero-Field Anomalous Hall Effect in Bulk Single Crystal Mn3Ir
Xin Gu1, Ruoqi Wang1, Bo Zhao2,3
1Key Laboratory of Quantum Materials and Devices of Ministry of Educations, School of Physics, Southeast University, Nanjing, 211189, China.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|November 8, 2025
Summary
Researchers grew bulk single crystals of the antiferromagnetic material Mn3Ir, enabling detailed study of its magnetic properties and anomalous Hall effect (AHE). This advancement is crucial for developing next-generation antiferromagnetic spintronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Spintronics
Background:
- The L12-phase noncollinear antiferromagnet (AFM) Mn3Ir is a key material for zero-field giant anomalous Hall effect (AHE) realization.
- Experimental studies of Mn3Ir properties are limited by challenges in growing bulk single crystals.
Purpose of the Study:
- To successfully grow stoichiometric Mn3Ir bulk single crystals.
- To characterize the intrinsic magnetic properties and AHE of Mn3Ir.
Main Methods:
- High-throughput flux method for growing (111)-oriented hexagonal Mn3Ir single crystals.
- Magnetization and AHE measurements.
Main Results:
- Stoichiometric Mn3Ir bulk single crystals were successfully grown.
- A smaller AHE was detected, attributed to the cancellation effect of coexisting A- and B-domain antiferromagnetic domains.
- Intrinsic magnetic properties and AHE details were revealed.
Conclusions:
- Successful growth of Mn3Ir bulk single crystals overcomes previous experimental limitations.
- Understanding the interplay of magnetic domains and AHE is critical for Mn3Ir.
- This work provides a vital material for advancing antiferromagnetic spintronic device development.
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