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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
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A parallel plate capacitor, when connected to a battery, develops a potential difference across its plates. This potential difference is key to the operation of the capacitor, as it determines how much electrical energy the capacitor can store.
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A Zinc Ion Capacitor-Based Fluidic Memristor.

Pei Tang1, Zhancai Qiu1, Yihao Zhu1

  • 1Department of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, China.

Advanced Materials (Deerfield Beach, Fla.)
|November 10, 2025
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Summary

A novel zinc-ion capacitor fluidic memristor mimics brain memory functions. This ionotronic device uses ion dynamics for history-dependent resistive switching, replicating synaptic plasticity for bio-inspired computing.

Keywords:
Ionic hysteresisIonotronicnanoporous carbonsupercapacitor‐memristorzinc‐ion capacitor

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Area of Science:

  • Electrochemistry and neuroscience intersection.
  • Development of ionotronic systems.

Background:

  • Brain-like memory functions are crucial for neuromorphic computing.
  • Electrochemical capacitors offer potential for ion-based memory devices.

Purpose of the Study:

  • To present a zinc-ion capacitor-based fluidic memristor (ZIC-FM).
  • To demonstrate emulation of short-term synaptic plasticity using nonlinear ion dynamics.

Main Methods:

  • Utilizing voltage-controlled zinc ion plating and stripping in a nanoporous carbon electrode.
  • Investigating nonlinear ion dynamics for hysteretic resistive switching behavior.

Main Results:

  • The ZIC-FM successfully replicated paired-pulse facilitation (PPF) and paired-pulse depression (PPD).
  • Demonstrated history-dependent resistive switching behavior mimicking biological neural plasticity.

Conclusions:

  • The ZIC-FM unifies energy storage and ionotronic memory functions.
  • This work advances fluidic neuromorphic devices for bio-inspired computing systems.