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Controlling Band-Bending for Perovskite Optoelectronic Devices Using Bismuth-Based Interlayers
Rubén Serrano-Nieto1,2, Wai Kin Yiu3, Marcin Giza3
1IMDEA Energy Institute, Advanced Porous Materials Unit (APMU), Avda. Ramón de la Sagra 3, Móstoles 28935, Madrid, Spain.
ACS Omega
|November 10, 2025
Summary
Interface engineering with bismuth-based perovskitoids enhances perovskite solar cell performance by deepening the conduction band. This improves electron transfer and reduces recombination for better optoelectronic devices.
Area of Science:
- Materials Science
- Optoelectronics
- Renewable Energy
Background:
- Interface engineering is crucial for optimizing perovskite optoelectronic devices like solar cells and LEDs.
- Interlayers effectively tune energy level alignment, improving charge transfer and reducing recombination.
Purpose of the Study:
- To investigate bismuth-based perovskitoids as interlayers in perovskite solar cells.
- To enhance charge carrier dynamics and device performance through interface modification.
Main Methods:
- Incorporation of bismuth-based perovskitoids as interlayers in a PIN architecture perovskite solar cell.
- Utilizing C60-fullerene as the electron charge extraction layer.
- Characterization using X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS).
Main Results:
- Perovskite solar cells with bismuth-based interlayers showed superior performance compared to those without.
- The conduction band position of the perovskite layer was deepened by approximately 0.5 eV.
- XPS and UPS measurements confirmed the band bending induced by the interlayer.
Conclusions:
- Bismuth-based perovskitoids are effective interlayers for tuning perovskite energy levels.
- This interface engineering approach significantly boosts perovskite solar cell efficiency.
- The findings support the development of advanced optoelectronic technologies using tailored perovskite interfaces.
