Efficient DC-coupled linear 60-GBd EML-based O-band transmitter

Area of Science:

• Optoelectronics
• Integrated Circuit Design
• Telecommunications

Background:

• O-band transmitters are critical components for current and future high-speed communication systems.
• Electroabsorption modulated lasers (EMLs) and advanced driver integrated circuits (ICs) are essential for efficient signal modulation and transmission.

Purpose of the Study:

• To present a novel O-band transmitter design integrating an InGaAlAs multi-quantum well (MQW) EML with a 130 nm SiGe BiCMOS driver IC.
• To analyze the co-design aspects, functionality, and architecture of the integrated components, focusing on the driver's performance characteristics.

Main Methods:

• Co-design of an InGaAlAs MQW EML and a 130 nm SiGe BiCMOS driver IC with a DC-coupled interface.
• Characterization of the driver's immunity to EAM photocurrent and its wide bias voltage range capability.
• Testing the transmitter's performance at various data rates and modulation formats (PAM4, NRZ, PAM8).

Main Results:

• The transmitter successfully transmitted 60 GBd PAM4 signals with an 8 dB extinction ratio at 4.3 pJ/bit power efficiency.
• The system demonstrated capability for up to 80 GBd NRZ signal transmission.
• High linearity allowed for 40 GBd PAM8 signal transmission.

Conclusions:

• The integrated O-band transmitter exhibits excellent performance, meeting the demands of high-speed optical communication.
• The design showcases significant potential for diverse applications requiring efficient and high-capacity data transmission.
• The co-designed EML and driver IC approach offers a robust solution for next-generation communication links.