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Polarity Engineering in a Single MoTe2 Device for Homogeneous Complementary Circuit Applications
Hyeonchang Son1, Seungbin Lee1, Seungchan Lee2
1Department of Electrical Engineering and Computer Science (EECS), Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea.
Abstract:
Two-dimensional (2D) materials offer unique opportunities for advanced electronic applications owing to their atomic thickness and immunity to short-channel effects. However, achieving precise n- and p-type polarity engineering within a single 2D channel poses significant challenges for complementary circuit integration. In this work, we demonstrate a polarity engineering strategy for MoTe2 using poly(methyl methacrylate) (PMMA)-assisted molecular adsorption for p-type doping and focused electron beam irradiation for n-type doping. This approach allows for the development of MoTe2 p- and n-FETs with a single flake, achieving ON-currents exceeding 2 μA at VDS = 1 V, subthreshold swings (SS) less than 451.3 mV/dec, field-effect mobilities (μFE) above 1.3 cm2 V-1 s-1, and ON/OFF current ratios above 104 for both polarities. Furthermore, we demonstrate the feasibility of homogeneous complementary circuit applications, with inverters exhibiting a high voltage gain of ∼48, as well as NAND/NOR gates, and full-wave rectifiers, highlighting the potential of our polarity engineering strategy. Moreover, as a proof-of-concept, we introduce reversible polarity conversion through controlled doping processes, enabling circuit function switching within a single MoTe2 device. Our polarity engineering opens up possibilities for advanced and versatile applications of 2D semiconductor-based devices.
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