Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Spin–Spin Coupling Constant: Overview01:08

Spin–Spin Coupling Constant: Overview

1.4K
In bromoethane, the three methyl protons are coupled to the two methylene protons that are three bonds away. In accordance with the n+1 rule, the signal from the methyl protons is split into three peaks with 1:2:1 relative intensities. The methylene protons appear as a quartet, with the relative intensities of 1:3:3:1.
Qualitatively, any spin plus-half nucleus polarizes the spins of its electrons to the minus-half state. Consequently, the paired electron in the hydrogen–carbon bond must...
1.4K
Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)01:20

Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)

1.5K
Two NMR-active nuclei bonded to a central atom can be involved in geminal or two-bond coupling. Geminal coupling is commonly seen between diastereotopic protons in chiral molecules and unsymmetrical alkenes, among others.
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...
1.5K
Spin–Spin Coupling: One-Bond Coupling01:17

Spin–Spin Coupling: One-Bond Coupling

1.4K
Coupling interactions are strongest between NMR-active nuclei bonded to each other, where spin information can be transmitted directly through the pair of bonding electrons. While nuclei polarize their electrons to the opposite spins, the bonding electron pair has opposite spins. Configurations with antiparallel nuclear spins are expected to be lower in energy. When coupling makes antiparallel states more favorable, J is considered to have a positive value. The one-bond coupling constant, 1J,...
1.4K
Spin–Spin Coupling: Three-Bond Coupling (Vicinal Coupling)01:22

Spin–Spin Coupling: Three-Bond Coupling (Vicinal Coupling)

1.4K
Vicinal or three-bond coupling is commonly observed between protons attached to adjacent carbons. Here, nuclear spin information is primarily transferred via electron spin interactions between adjacent C‑H bond orbitals. This generally favors the antiparallel arrangement of spins, so 3J values are usually positive.
The extent of coupling depends on the C‑C bond length, the two H‑C‑C angles, any electron-withdrawing substituents, and the dihedral angle between the involved orbitals. The...
1.4K
Valence Bond Theory02:42

Valence Bond Theory

11.1K
Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
11.1K
Angle of Twist: Problem Solving01:13

Angle of Twist: Problem Solving

727
An electric motor applies a torque of 700 N·m to an aluminum shaft, triggering a stable rotation. Two pulleys, B and C, are subjected to torques of 300 N·m and 400 N·m, respectively. The modulus of rigidity is provided as 25 GPa. With the knowledge of the length and diameter of each segment, the twist angle between the two pulleys can be computed. First, a section cut is made between pulleys B and C, and the cut cross-section is analyzed using a free-body diagram. Given that the torque...
727

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

[Scapular belt for the treatment of comminuted fractures of scapula].

Zhongguo gu shang = China journal of orthopaedics and traumatology·2010
Same author

Manipulation of ordered nanostructures of protonated polyoxometalate through covalently bonded modification.

Chemistry (Weinheim an der Bergstrasse, Germany)·2010
Same author

Developments in nonsteroidal antiandrogens targeting the androgen receptor.

ChemMedChem·2010
Same author

Dynamic presentation of immobilized ligands regulated through biomolecular recognition.

Journal of the American Chemical Society·2010
Same author

[Research on crop-weed discrimination using a field imaging spectrometer].

Guang pu xue yu guang pu fen xi = Guang pu·2010
Same author

A palladium/copper bimetallic catalytic system: dramatic improvement for Suzuki-Miyaura-type direct C-H arylation of azoles with arylboronic acids.

Chemistry (Weinheim an der Bergstrasse, Germany)·2010

Related Experiment Video

Updated: Jan 6, 2026

Magnetic Tweezers for the Measurement of Twist and Torque
11:41

Magnetic Tweezers for the Measurement of Twist and Torque

Published on: May 19, 2014

23.8K

Uniform and Robust Field-Free Spin-Orbit Torque Switching via Complementary Double-Wedge Structure.

Ru Bai1,2, Qilin Yang1, Haodong Fan1,3

  • 1School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China.

Nano Letters
|November 12, 2025
PubMed
Summary

A new complementary double-wedge structure enables robust, uniform field-free spin-orbit torque (SOT) switching for magnetic storage chips. This design is CMOS-compatible and suitable for mass production.

Keywords:
complementary double-wedgefield-free switchingspin−orbit torquetilted magnetic anisotropytilted texture

More Related Videos

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.7K
Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
09:06

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

8.5K

Related Experiment Videos

Last Updated: Jan 6, 2026

Magnetic Tweezers for the Measurement of Twist and Torque
11:41

Magnetic Tweezers for the Measurement of Twist and Torque

Published on: May 19, 2014

23.8K
Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.7K
Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
09:06

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

8.5K

Area of Science:

  • Spintronics
  • Materials Science
  • Semiconductor Devices

Background:

  • Field-free spin-orbit torque (SOT) switching is essential for advanced magnetic storage.
  • Current methods face challenges in robustness, uniformity, and CMOS compatibility for industrial use.

Purpose of the Study:

  • To propose and demonstrate a novel field-free SOT switching scheme.
  • To enhance uniformity and CMOS compatibility for magnetic storage applications.

Main Methods:

  • Utilized a complementary double-wedge structure with tilted Pt(111) texture.
  • Induced tilted magnetic anisotropy to achieve a high effective field ratio.
  • Evaluated performance metrics across 2-inch wafers, including post-annealing tests.

Main Results:

  • Achieved a remarkable z/y effective field ratio of 89.8%.
  • Demonstrated uniform performance in anomalous Hall resistance, switching current density, and SOT equivalent field.
  • Confirmed field-free switching stability after annealing, indicating CMOS back-end-of-line process compatibility.

Conclusions:

  • The complementary double-wedge design provides robust and uniform field-free SOT switching.
  • This approach surpasses traditional single-wedge structures in uniformity.
  • The scheme is highly suitable for mass production in next-generation magnetic storage chips.