Microstructural and Residual Stress Homogenization of Titanium Sputtering Targets for OLED 6G Applications Through...

The optimization of the microstructural homogeneity and residual stress distribution in Ti sputtering targets for OLED 6G applications is essential for improving dimensional stability, durability, and deposition performance. Herein, 3N Ti plates were hot-rolled at 730 °C and then annealed at 600 °C and 700 °C for different durations to investigate the effects of annealing parameters on microstructural evolution and stress relaxation. X-ray diffraction analysis revealed that hexagonal α-Ti with progressive development of the (002) orientation was produced during annealing under all the conditions. Electron backscatter diffraction analyses showed that short-time annealing at 600 °C (≤30 min) generated heterogeneous grains, high dislocation density, and mixed grain boundary character, whereas extended annealing (≥60 min) produced a more uniform microstructure. However, residual stress differences between the plate center and edge remained significant under this condition. Conversely, annealing at 700 °C promoted progressive recrystallization, as indicated by increased high-angle grain boundary fractions and decreased kernel average misorientation values, and facilitated grain growth stabilization across the plate. Prolonged annealing improved microstructural and residual stress uniformity significantly, and near-complete homogenization was achieved after 5 h. These findings demonstrate that annealing at 700 °C for sufficient time is optimal for producing homogeneous microstructures and uniform residual stress distributions, providing valuable guidelines for Ti sputtering target processing.