Electrically driven heterogeneous III-V/Si photonic crystal surface-emitting laser

We demonstrate a C-band electrically driven photonic-crystal surface-emitting laser (PCSEL) based on III-V/Si heterogeneous integration, in which a 2D photonic crystal (PhC) patterned on the silicon layer provides in-plane distributed feedback and mode selectivity for lasing action, while a directly bonded InP-based epitaxial wafer supplies optical gain. The device achieves a low threshold of 64 mA and peak output power over 100 mW under pulsed injection. In continuous-wave operation, single-mode lasing begins at a threshold of 55 mA with up to 3 mW output under controlled TEC temperature of 5℃. Temperature-dependent measurements highlight the importance of thermal effects on performance. Our findings underscore the potential of heterogeneous PCSELs as compact on-chip light sources for silicon photonics.