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Observation of type-II and type-III Dirac points in circuit lattices
Wencai Wang1, Yubin Ma1, Muhammad Imran2
1National Key Laboratory of Radar Detection and Sensing, School of Electronic Engineering, Xidian University, Xi'an 710071, China.
Iscience
|November 17, 2025
Summary
Researchers observed type-II and type-III Dirac points (DPs) in circuit lattices, overcoming fabrication challenges. This opens new avenues for exploring quantum phenomena like anisotropic magneto-transport and topological phase transitions.
Area of Science:
- Condensed matter physics
- Quantum materials science
Background:
- Dirac fermions are quasi-particle excitations in Dirac materials, characterized by Dirac points (DPs).
- Type-II and type-III DPs exhibit unique magneto-transport properties but are rare and difficult to realize in classical systems.
- Fabricating classical systems with mirror symmetry for DPs presents significant challenges.
Purpose of the Study:
- To experimentally observe type-II and type-III Dirac points (DPs) in macroscopic classical systems.
- To demonstrate the transition between type-II and type-III DPs.
- To investigate the emergence of edge states associated with these DPs.
Main Methods:
- Utilizing circuit lattices to emulate Dirac materials.
- Observing strongly tilted Dirac cones to confirm type-II DPs.
- Varying coupling capacitors to induce transitions between type-II and type-III DPs.
Main Results:
- Experimental observation of type-II and type-III Dirac points (DPs) in circuit lattices.
- Confirmation of type-II DPs through observation of tilted Dirac cones.
- Demonstrated transition from type-II to type-III DPs, characterized by a flat band.
- Observed emergence of edge states from DP degeneracies.
Conclusions:
- Circuit lattices provide a viable platform for realizing and studying type-II and type-III Dirac points (DPs).
- The findings offer insights into anisotropic magneto-transport and topological phase transitions.
- This work paves the way for exploring novel quantum phenomena in classical systems.
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