Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Plasmon-Induced Hot-State Multiexciton Emission from Quantum Dots Coupled to Metallic Nanocavities.

ACS nano·2026

Same author

Nature inspired design methodology for a wide field of view achromatic metalens.

Nanophotonics (Berlin, Germany)·2025

Same author

Wafer-scale integration of photonic integrated circuits and atomic vapor cells.

Nanophotonics (Berlin, Germany)·2025

Same author

Suppressing the Decoherence of Alkali-Metal Spins at Low Magnetic Fields.

Physical review letters·2025

Same author

Waveguide-integrated mid-IR photodetector and all-optical modulator based on interlayer excitons absorption in a WS<sub>2</sub>/HfS<sub>2</sub> heterostructure.

Nanophotonics (Berlin, Germany)·2024

Same author

Generalized metric for broadband flat lens performance comparison.

Nanophotonics (Berlin, Germany)·2024

Search research articles

Related Experiment Video

Updated: Jun 22, 2026

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Published on: December 2, 2013

Silicon rich nitride: a platform for controllable structural colors.

Oren Goldberg¹, Noa Mazurski¹, Uriel Levy^1,2

¹The Faculty of Science, The Center for Nanoscience and Nanotechnology, Institute of Applied Physics, The Hebrew University of Jerusalem, Jerusalem 91904, Israel.

Nanophotonics (Berlin, Germany)

|November 17, 2025

Summary

Silicon rich nitride (SRN) metasurfaces offer vibrant structural colors by adjusting the silicon ratio. Higher SRN ratios enhance color gamut and resolution for advanced photonic devices.

Keywords:

dielectric metasurface silicon rich nitride structural colors

More Related Videos

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Published on: August 8, 2025

Fabrication and Optimization of Type II Silicon Clathrate Films

Fabrication and Optimization of Type II Silicon Clathrate Films

Published on: October 14, 2025

Related Experiment Videos

Last Updated: Jun 22, 2026

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Published on: December 2, 2013

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Published on: August 8, 2025

Fabrication and Optimization of Type II Silicon Clathrate Films

Fabrication and Optimization of Type II Silicon Clathrate Films

Published on: October 14, 2025

Area of Science:

Photonics
Materials Science
Nanotechnology

Background:

High refractive index dielectric materials are essential for advanced dielectric metasurfaces.
Silicon rich nitride (SRN) offers tunable refractive index but faces challenges with transparency and CMOS compatibility.
Metasurface performance is affected by material losses, especially at resonance frequencies.

Purpose of the Study:

To investigate the effect of varying the silicon ratio in SRN on structural color applications.
To evaluate SRN's performance using metrics like gamut coverage, saturation, and reflection amplitude.
To compare SRN's color rendering capabilities with other metasurface materials.

Main Methods:

Fabrication of SRN metasurfaces with controlled silicon-to-nitride ratios.
Characterization of optical properties including color gamut, saturation, and reflection amplitude.
Demonstration of structural color generation using fabricated SRN samples.

Main Results:

Increased silicon content in SRN significantly enhances structural color metrics.
SRN metasurfaces achieve 166% sRGB color space coverage and 38,000 dots per inch resolution.
SRN demonstrates superior CIE diagram coverage compared to other popular metasurface materials.

Conclusions:

SRN is a promising material for high-performance structural color applications in metasurfaces.
Tunable SRN composition enables vivid, high-resolution color generation.
SRN offers significant advantages for photonic devices and future material development.