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Observation of Interlayer Excitons in Mixed-Dimensional MoS2 and InGaN/GaN Quantum Well Heterojunctions

Do Wan Kim1, Seokje Lee2,3, Yongmin Baek1,4

  • 1Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, United States.

ACS Applied Materials & Interfaces
|November 18, 2025
PubMed

Keywords:
InGaN quantum wellband alignment engineeringexciton dynamicsheterojunctioninterlayer excitonstransition metal dichalcogenides

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