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Updated: Jun 13, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Scalable and bright: unlocking functional silicon quantum dots with near-unity internal quantum yield through
Filip Matějka1,2, Pavel Galář1, Josef Khun2
1Institute of Physics of the CAS, v.v.i., Cukrovarnická 10, 162 00 Prague 6, Czechia. matejkaf@fzu.cz.
This study introduces a novel plasma-based method for fabricating and modifying silicon quantum dots (SiQDs). This technique enables scalable production of bright, stable SiQDs with tunable properties for advanced applications.
Area of Science:
- Nanomaterials Science
- Plasma Physics
- Quantum Dot Technology
Background:
- Silicon quantum dots (SiQDs) offer non-toxicity and tunable optoelectronic properties.
- Scalable fabrication and facile modification are crucial for SiQD applications.
Purpose of the Study:
- To develop a versatile synthesis-modification methodology for SiQDs using non-thermal plasma.
- To enable rapid ligand attachment and control photoluminescence efficiency.
Main Methods:
- Non-thermal plasma synthesis for size tuning of SiQDs.
- Plasma-induced in-liquid reactions (PILRs) for ligand attachment.
- 3D-printed components for atmospheric control during reactions.
Main Results:
- Brightly luminescent SiQDs (diameters from 2.4 nm, quantum yields up to 20%) with excellent colloidal stability.
- Near-unity internal quantum yield for bright SiQDs.
- Insights into surface chemistry and aggregation effects on photoluminescence.
Conclusions:
- A simple, versatile route to functionally engineered SiQDs is established.
- The methodology provides new insights into SiQD emission dynamics.
- Foundation laid for SiQDs in photonic, bioimaging, and energy-harvesting devices.
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