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Measuring Hall voltage and Hall resistance in an atom-based quantum simulator
T-W Zhou1, T Beller1, G Masini2
1Department of Physics and Astronomy, University of Florence, 50019, Sesto Fiorentino, Italy.
Nature Communications
|November 21, 2025
Summary
Researchers measured the Hall voltage and Hall resistance in a neutral-atom quantum simulator for the first time. This breakthrough allows studying strongly correlated fermions in a cold-atom Hall bar system.
Area of Science:
- Quantum simulation
- Condensed matter physics
- Atomic physics
Background:
- The Hall effect describes a voltage perpendicular to current and magnetic field, crucial in solid-state systems.
- Quantum simulators have shown complex Hall effect behaviors, but direct measurements in strongly correlated fermion systems were lacking.
Purpose of the Study:
- To develop a method for measuring Hall voltage in neutral-atom quantum simulators.
- To achieve the first direct measurement of Hall resistance in a cold-atom Hall bar analogue.
- To investigate the Hall resistance dependence on carrier density in these systems.
Main Methods:
- Utilized a neutral-atom quantum simulator.
- Developed a technique to measure Hall voltage.
- Performed direct measurements of Hall resistance.
- Conducted theoretical analyses alongside experimental data.
Main Results:
- Successfully measured Hall voltage in a neutral-atom quantum simulator.
- Provided the first direct measurement of Hall resistance in a cold-atom Hall bar.
- Studied the Hall resistance's dependence on carrier density.
Conclusions:
- Closed a significant gap between analogue quantum simulations and solid-state Hall effect measurements.
- Established a key tool for exploring the Hall effect in tunable, strongly correlated systems.
- Enabled new avenues for research in quantum phenomena and condensed matter physics.
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