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Ultralow Dielectric Loss with Excellent Thermal Stability in BiScO3-PbTiO3 Piezoelectric Ceramics via Phase Structure
Shaotong Gong1, Tian-Long Zhao1, Yifan Zhang2
1Faculty of Integrated Circuit, Xidian University, Xi'an 710071, China.
None:
BiScO3-PbTiO3 (BS-PT) ceramics combine high piezoelectricity and a high Curie temperature but are limited in power applications by high dielectric loss (tan δ ≈ 4%) and low mechanical quality factor (Qm ≈ 28). Here, we introduce relaxor ferroelectric Bi(Mn2/3Nb1/3)O3 (BMN) to construct a T-rich morphotropic phase boundary (MPB), achieving simultaneous reduction of tan δ and enhancement of Qm without significant degradation of piezoelectric properties. The optimized 0.02BMN-BS-0.635PT composition delivers tan δ = 0.57%, d33 = 365 pC/N, Qm = 124, kp = 0.53, kt = 0.54, and Tc = 435 °C. Mn-substitution at the B-site generates oxygen vacancies that couple with receptor centers to form defective dipoles, and their strong interaction with the T-rich phase suppresses polarization rotation and domain-wall motion, yielding reduced dielectric loss and enhanced Qm, while relaxor-induced polar nanodomains help maintain a high d33 value. In situ electrical and structural characterizations demonstrate excellent thermal stability: kp and kt remain 0.5 at 300 °C with <7% variation, and d33 increases continuously up to 300 °C, indicating a depolarization temperature above this threshold. High-temperature XRD further shows that the rhombohedral-to-tetragonal phase ratio is stable below 300 °C, consistent with the T-rich MPB design at room temperature, accounting for the observed robustness. This study demonstrates the potential of BMN-BS-PT ceramics for high-temperature, high-power piezoelectric applications and establishes a generalizable phase structure regulation strategy for designing advanced piezoelectric ceramics.
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