Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Diode: Reverse bias01:14

Diode: Reverse bias

1.7K
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
1.7K
Diode: Forward bias01:20

Diode: Forward bias

2.0K
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
2.0K
Biasing of P-N Junction01:16

Biasing of P-N Junction

1.7K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.7K
Modeling of Diode Reverse Characteristics01:14

Modeling of Diode Reverse Characteristics

584
In electronic circuits, reverse-biased diode configurations are critical for regulating voltage levels. Zener diodes exploit the reverse breakdown phenomenon and exhibit a controlled breakdown at a specific Zener voltage (VZ). They are designed to maintain a constant voltage across their terminals and are commonly used for voltage regulation in circuits.
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...
584
Schottky Barrier Diode01:27

Schottky Barrier Diode

912
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
912
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

528
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
528

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Incompressible Quantum Hall Liquid on the Four-Dimensional Sphere.

Physical review letters·2026
Same author

Kinetic Energy Driven Ferromagnetic Insulator.

Physical review letters·2026
Same author

Explicit Wave Function of the Interacting Non-Hermitian Spin-1/2 1D System.

Physical review letters·2026
Same author

Editorial expression of concern (EEoC): small interfering RNA targeting mcl-1 enhances proteasome inhibitor-induced apoptosis in various solid malignant tumors.

BMC cancer·2026
Same author

Exploring eye movement abnormalities as objective biomarkers for Parkinson's disease utilizing virtual reality-based eye tracking.

BMC neurology·2026
Same author

A Novel Acetylcholine Nanosensor for Single Vesicle Storage and Sub-Quantal Exocytosis in Living Neurons and Organoids.

Angewandte Chemie (International ed. in English)·2026

Related Experiment Video

Updated: Jan 10, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.2K

Current-reversion symmetry breaking and the DC Josephson diode effect.

Da Wang1, Qiang-Hua Wang2, Congjun Wu3

  • 1National Laboratory of Solid State Microstructures & School of Physics, Nanjing University, Nanjing 210093, China; Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China; Jiangsu Key Laboratory of Quantum Information Science and Technology, Nanjing University, Nanjing 210093, China.

Science Bulletin
|November 25, 2025
PubMed
Summary
This summary is machine-generated.

The direct-current (DC) Josephson diode effect requires breaking more than just time-reversal and parity symmetries. Additional symmetry breaking, specifically related to current reversion, is essential for this superconducting diode behavior.

Keywords:
Critical currentCurrent-reversion symmetry breakingJosephson diode effectParticle-hole symmetry breaking

More Related Videos

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.2K
High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
09:01

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings

Published on: April 16, 2017

8.1K

Related Experiment Videos

Last Updated: Jan 10, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.2K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.2K
High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
09:01

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings

Published on: April 16, 2017

8.1K

Area of Science:

  • Condensed Matter Physics
  • Quantum Mechanics
  • Superconductivity

Background:

  • The superconducting diode effect, or nonreciprocal critical current, has been observed in systems breaking time-reversal and parity symmetries.
  • However, these symmetry breakings are insufficient conditions for the effect.

Purpose of the Study:

  • To identify the complete set of symmetry conditions necessary for the direct-current (DC) Josephson diode effect.
  • To classify the dependencies of free energy on phase difference and magnetic field for diode behavior.

Main Methods:

  • Symmetry analysis of the free energy dependence on gauge-independent phase difference and magnetic field.
  • Classification of free energy dependencies into current-reversion (JR), field-reversion, and field-current reversion conditions.
  • Application of symmetry considerations to specific superconducting systems.

Main Results:

  • Breaking time-reversal and parity symmetries is necessary but not sufficient for the DC Josephson diode effect.
  • Additional symmetries, including particle-hole symmetry, must also be broken.
  • The DC Josephson diode effect is intrinsically linked to the breaking of current-reversion (JR) symmetries.
  • Five classes of critical current-magnetic field relations were identified, with three exhibiting the diode effect.

Conclusions:

  • The DC Josephson diode effect is a direct consequence of JR symmetry breaking.
  • Understanding these symmetry requirements provides a guiding principle for designing DC Josephson diodes.