Ion-Based Characterization of Laser Beam Profiles for Quantum Information Processing

Laser-driven operations are a common approach for engineering one- and two-qubit gates in trapped-ion arrays. Measuring key parameters of these lasers, such as beam sizes, intensities, and polarizations, is central to predicting and optimizing gate speeds and stability. Unfortunately, it is challenging to accurately measure these properties at the ion location within an ultra-high vacuum chamber. Here, we demonstrate how the ions themselves may be used as sensors to directly characterize the laser beams needed for quantum gate operations. Making use of the four-photon Stark Shift effect in ¹⁷¹Yb⁺ ions, we measure the profiles, alignments, and polarizations of the lasers driving counter-propagating Raman transitions. We then show that optimizing the parameters of each laser individually leads to higher-speed Raman-driven gates with smaller susceptibility to errors. Our approach demonstrates the capability of trapped ions to probe their local environments and to provide useful feedback for improving system performance.