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SPICE compact model of silicon avalanche sharpening device: Design and verification
S T Zhang1, J Y Han1, R H Sun1
1College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China.
The Review of Scientific Instruments
|November 26, 2025
Summary
A new physics-based model for Silicon Avalanche Sharpening (SAS) diodes enables accurate simulation of high-power microwave systems. This model predicts dynamic breakdown voltage with high precision, crucial for device design.
Area of Science:
- Semiconductor Device Physics
- Microwave Engineering
- Compact Modeling
Background:
- High-power ultra-wideband microwave systems require accurate device models.
- Existing models for Silicon Avalanche Sharpening (SAS) diodes have limitations in predicting dynamic behavior.
Purpose of the Study:
- To develop a physics-based SPICE compact modeling methodology for SAS diodes.
- To accurately predict the dynamic breakdown voltage of SAS diodes under high-voltage pulse conditions.
Main Methods:
- Established a physical model using device parameters and semiconductor simulations.
- Developed an equivalent circuit model based on bipolar carrier diffusion theory.
- Implemented a SPICE compact model incorporating conductivity modulation effects.
Main Results:
- Simulations showed dynamic breakdown voltage is 1.8 times the static value under fast-rising pulses.
- The compact model demonstrated excellent agreement with physical simulations (<5% deviation).
- Experimental validation confirmed the model's accuracy (<3% deviation in dynamic breakdown voltage).
Conclusions:
- The proposed physics-based SPICE compact model accurately predicts SAS diode behavior.
- The model serves as a reliable tool for efficient circuit simulation in high-power microwave systems.
- Provides critical guidance for engineering applications.
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