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Flexible Inorganic/Organic Memristor Based on W-Doped MoOx/Poly(methyl methacrylate) Heterostructure.

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  • 1Department of Physics, University of Patras, Rio, 26504 Patra, Greece.

Nanomaterials (Basel, Switzerland)
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Tungsten-doped molybdenum oxide films were developed for flexible memristors. These devices show promising non-volatile memory behavior, indicating potential for next-generation resistive random-access memory (ReRAM) applications.

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PMMAdopingheterostructirememristormolybdenum oxideresistive switchingtungsten

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid State Physics

Background:

  • Resistive switching (RS) in memristive devices is crucial for advanced memory technologies.
  • Oxygen vacancies in metal oxides play a key role in facilitating RS behavior.
  • Tungsten doping of molybdenum oxide is explored to enhance material properties for memristors.

Purpose of the Study:

  • To investigate the doping of molybdenum oxide (MoOx) with tungsten (W).
  • To fabricate and characterize a flexible memristor utilizing a W-doped MoOx layer.
  • To analyze the resistive switching characteristics and conduction mechanisms of the fabricated device.

Main Methods:

  • X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDS) for material characterization.
  • Fabrication of a flexible memristor with a PET/ITO/W-MoOx/PMMA/Al structure.
  • Electrical testing to evaluate resistive switching parameters like memory window and retention time.

Main Results:

  • Successful incorporation of W into MoOx lattice confirmed by XPS and EDS.
  • Presence of oxygen vacancies in W-MoOx films facilitating resistive switching.
  • W-MoOx/PMMA memristor demonstrated a memory window of ~12 and retention > 2 × 104 s.
  • Space-charge-limited current (SCLC) model explains conduction in the high-resistance state.

Conclusions:

  • The W-MoOx/PMMA heterostructure exhibits robust non-volatile memory behavior.
  • The study highlights the potential of W-doped MoOx as a functional layer for flexible ReRAM devices.
  • Interfacial modulation using PMMA is effective in tuning RS performance.