Tapered Cladding Design for Monolithic Waveguide-Photodetector Coupling in Si-Based Integrated Photonics

Silicon photonics offers a powerful route to leverage existing microelectronics infrastructure to enhance performance and enable new applications in data processing and sensing. Among the available material platforms, silicon nitride (Si₃N₄) provides significant advantages due to its wide optical transmission window. A key challenge, however, remains the monolithic integration of passive nitride-based photonic components with active electronic devices directly on silicon wafers. In this work, we propose and demonstrate a tapered bottom-cladding design that enables efficient coupling of visible light from Si₃N₄/SiO₂ core-cladding waveguides into planar p-n junction photodiodes fabricated on the silicon surface. Si₃N₄/SiO₂ waveguides were fabricated using fully CMOS-compatible processes and materials. Controlled reactive ion etching (RIE) of SiO₂ allowed the formation of vertically tapered claddings, and finite-difference time-domain (FDTD) simulations were carried out to analyze coupling efficiency across wavelengths from 509 nm to 740 nm. Simulations showed transmission efficiencies above 90% for taper angles below 30°, with near-total coupling at 10°. Experimental fabrication achieved angles as low as 8°. Responsivity simulations yielded values up to 311 mA W^-1 for photodiodes without internal gain. These results demonstrate the feasibility of fabricating monolithic Si-based waveguide-photodetector systems using simple, CMOS-compatible methods, opening a scalable path for integrated photonic-electronic devices operating in the visible range.