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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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MOSFET01:16

MOSFET

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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
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MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
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Biasing of FET01:22

Biasing of FET

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Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
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Non-ohmic Devices00:51

Non-ohmic Devices

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In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
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Related Experiment Video

Updated: Jan 10, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

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Ferroelectric transistors for low-power NAND flash memory.

Sijung Yoo1, Taek Jung Kim1, Seung-Geol Nam1

  • 1Thin Film Technical Unit, Device Research Center, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon, Korea.

Nature
|November 26, 2025
PubMed
Summary
This summary is machine-generated.

Researchers developed ultralow-power ferroelectric field-effect transistors (FeFETs) using a novel gate stack. These FeFETs significantly reduce power consumption in storage devices while maintaining high multi-level cell capability.

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Computer Engineering

Background:

  • NAND flash memory is crucial for modern storage, driven by AI and data-centric computing.
  • Its series 'string' architecture necessitates high-voltage operations, leading to significant power consumption.
  • Reducing pass voltage in NAND flash limits memory window and multi-level operation.

Purpose of the Study:

  • To develop ultralow-power ferroelectric field-effect transistors (FeFETs) that overcome the limitations of conventional NAND flash memory.
  • To achieve high multi-level cell capability with significantly reduced power consumption.
  • To demonstrate the feasibility of scaled, 3D-integrated FeFETs for next-generation storage.

Main Methods:

  • Fabrication of FeFETs utilizing a gate stack of zirconium-doped hafnia and an oxide semiconductor channel.
  • Characterization of FeFET electrical properties, including memory window and pass voltage.
  • 3D integration of FeFET stacks into vertical structures with a 25-nm channel length.

Main Results:

  • FeFETs demonstrate up to 5-bit per cell multi-level capability, comparable to or exceeding current NAND technology.
  • Achieved nearly zero pass voltage, resulting in up to 96% power savings in string-level operations.
  • 3D-integrated FeFETs maintain robust electrical properties at scaled dimensions, showing low-pass-voltage string operation.

Conclusions:

  • The developed FeFETs offer a solution to the power consumption dilemma in NAND flash memory.
  • These FeFETs pave the way for next-generation storage memory with enhanced capacity, power efficiency, and reliability.
  • The technology is suitable for scaled dimensions and 3D integration, crucial for future storage advancements.