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DLL Design with Wide Input Duty Cycle Range and Low Output Clock Duty Cycle Error.

Binyu Qin1, Haoyu Qin2, Chenyu Fang1

  • 1School of Integrated Circuits, Shandong University, Jinan 250101, China.

Micromachines
|November 27, 2025
PubMed
Summary
This summary is machine-generated.

This study introduces a novel Delay-Locked Loop (DLL) design with a wide duty cycle range, crucial for high-speed semiconductor chips like DRAM. The simple architecture ensures efficient clock signal synchronization for advanced electronic systems.

Keywords:
BBPDDLLDRAMdual loop

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Area of Science:

  • Electrical Engineering
  • Computer Engineering
  • Microelectronics

Background:

  • Modern semiconductor chips demand higher data rates and precise clock signals.
  • Existing Delay-Locked Loop (DLL) designs often struggle with wide input clock duty cycle variations.
  • Dynamic Random-Access Memory (DRAM) systems require robust clocking solutions.

Purpose of the Study:

  • To present a novel DLL architecture with a simple design.
  • To achieve a wide input clock duty cycle range for enhanced applicability.
  • To meet the stringent clock requirements of high-speed semiconductor applications.

Main Methods:

  • Designed a DLL utilizing two Bang-Bang Phase Detectors (BBPDs).
  • The BBPDs are employed to independently adjust the rising and falling edges of the divided clock signal.
  • Implementation and verification were performed using a 65 nm CMOS process through simulation.

Main Results:

  • The DLL operates at a frequency of 3.2 GHz.
  • Achieved a wide input clock duty cycle range from 18% to 72%.
  • Demonstrated a low maximum output clock duty cycle error of 0.6%, peak-to-peak jitter of 15.73 ps, and power consumption of 12.7 mW.

Conclusions:

  • The proposed DLL design offers a simple yet effective solution for wide duty cycle clock synchronization.
  • The design is well-suited for high-speed applications, including DRAM, due to its performance metrics.
  • This work contributes a valuable clocking component for next-generation semiconductor integrated circuits.