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Temperature-Dependent Reverse-Recovery Behavior Analysis and Circuit-Level Mitigation of Superjunction MOSFETs
Wenrong Cui1, Peng Liao1, Yanghao Wang1
1State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.
Micromachines
|November 27, 2025
Summary
High temperatures degrade superjunction Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) due to increased carrier lifetime. Adding a capacitor improves switching reliability by suppressing reverse recovery.
Area of Science:
- Electrical Engineering
- Materials Science
- Semiconductor Physics
Background:
- Superjunction MOSFETs are crucial for high-power applications.
- Understanding their behavior at elevated temperatures is vital for reliability.
- Reverse-recovery characteristics significantly impact switching performance.
Purpose of the Study:
- To investigate the temperature dependence of reverse-recovery in superjunction MOSFETs.
- To identify the physical mechanisms behind high-temperature degradation.
- To propose a practical method for enhancing device reliability.
Main Methods:
- Experimental characterization of superjunction MOSFETs at varying temperatures.
- Technology Computer-Aided Design (TCAD) simulations to model device behavior.
- Analysis of reverse-recovery charge, current, and switching transients.
Main Results:
- Switching failure observed at 145 °C due to severe reverse-recovery degradation.
- Increased carrier lifetime at higher temperatures exacerbates reverse-recovery issues.
- A parallel capacitor effectively suppresses reverse recovery and improves reliability.
Conclusions:
- Temperature significantly affects superjunction MOSFET reverse-recovery performance.
- Carrier lifetime is a key factor in high-temperature degradation.
- A simple capacitor addition offers a viable strategy for improving high-temperature power electronics reliability.
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