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Investigation of Electron Transport Layer Influence on Asymmetric Bipolar Switching in Transparent BST-Based RRAM

Kai-Huang Chen1, Ming-Cheng Kao2, Hsin-Chin Chen1

  • 1Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 83347, Taiwan.

Micromachines
|November 27, 2025
PubMed
Abstract

Keywords:
BSTI–Vbipolar switching characteristicselectron transport layerelectronic conduction mechanismresistance random access memory

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