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Precursor Reactivity-Dependent Growth for Alloyed InGaP Quantum Dots.

Yating Huang1, Yibo Li1, Tianli Liu1

  • 1Key Laboratory of Physics and Technology for Advanced Batteries, Ministry of Education, College of Physics, Jilin University, Changchun 130012, China.

Inorganic Chemistry
|November 27, 2025
PubMed
Summary

Precise control over alloyed indium gallium phosphide (InGaP) quantum dots (QDs) was achieved by matching precursor reactivities. This method enabled the synthesis of stable, high-performance InGaP/ZnS core/shell quantum dots with enhanced photoluminescence.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Alloying is a key strategy for bandgap engineering in semiconductor quantum dots (QDs).
  • Homogeneous alloyed QDs require precursors with matched reactivities for controlled synthesis.
  • Indium gallium phosphide (InGaP) QDs are promising for optoelectronic applications but challenging to synthesize with controlled composition.

Purpose of the Study:

  • To systematically screen indium and gallium precursors for synthesizing homogeneous alloyed InGaP QDs.
  • To establish a correlation between precursor feed ratio and final QD composition.
  • To achieve precise control over the gallium content in InGaP alloyed QDs.

Main Methods:

  • Systematic screening of various indium and gallium precursors.
  • Synthesis of alloyed InGaP quantum dots (QDs).
  • Correlation analysis between precursor molar ratio and QD composition.
  • Coating of InGaP QDs with a zinc sulfide (ZnS) shell.

Main Results:

  • Identified indium and gallium precursors with matched reactivities for homogeneous InGaP QD synthesis.
  • Achieved precise control over Ga content in InGaP QDs, ranging from 5% to 20%.
  • Synthesized stable InGaP/ZnS core/shell QDs with a photoluminescence quantum yield of 70%.

Conclusions:

  • Precursor reactivity matching is crucial for the synthesis of compositionally controlled alloyed QDs.
  • This study provides a valuable reference for the rational design of advanced alloyed nanocrystals.
  • Controlled synthesis of InGaP QDs opens avenues for advanced semiconductor materials.